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Laser-induced phase separation of silicon carbide | Nature Communications
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Effects of Excimer Laser Irradiation on the Morphological, Structural, and Electrical Properties of Aluminum-Implanted Silicon Carbide (4H-SiC) | ACS Applied Electronic Materials
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▷ SIC MARKING XL BOX Laser Marking Machine: buy used
Laser-induced phase separation of silicon carbide | Nature Communications
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Selecting the laser source for SiC laser annealing equipment, an essential technology for manufacturing power semiconductors｜Laser Annealing｜Solution｜Solutions｜Sumitomo Heavy Industries, Ltd. Mechatronics Division
Fabrication of through-wafer 3D microfluidics in silicon carbide using femtosecond laser
Coatings | Free Full-Text | Reduced On-Resistance and Improved 4H-SiC Junction Barrier Schottky Diodes Performance by Laser Annealing on C-Face Ohmic Regions in Thin Structures
